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SBD10C150F Schematic ( PDF Datasheet ) - Silan Microelectronics

Teilenummer SBD10C150F
Beschreibung 150V SCHOTTKY RECTIFIER
Hersteller Silan Microelectronics
Logo Silan Microelectronics Logo 




Gesamt 4 Seiten
SBD10C150F Datasheet, Funktion
10A, 150V SCHOTTKY RECTIFIER
GENERAL DESCRIPTION
SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial
planar technology. Typical applications are in switching power
supplies and protection circuit etc.
FEATURES
Guard ring for Stress Protection
High Surge Capacity
Low power loss , high efficiency
Low forward voltage drop
SBD10C150T/F
ORDERING SPECIFICATIONS
Part No.
SBD10C150T
SBD10C150F
Package
TO-220-3L
TO-220F-3L
Marking
SBD10C150T
SBD10C150F
Material
Pb free
Pb free
Packing
Tube
Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameter
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge [email protected]
Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Value
150
10
120
150
-40~150
Unit
V
A
A
°C
°C
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Symbol
RθJC
Value
2.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Parameter
Forward Voltage
Symbol
VF
Reverse Current
IR
Test conditions
IF=5A (TC=25°C)
IF=5A(TC=125°C)
VR=1500V(TC=25°C)
VR=1500V(TC=125°C)
Min.
--
--
--
--
Max.
0.9
0.75
50
25
Unit
V
V
μA
mA
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