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K3515-01MR Schematic ( PDF Datasheet ) - Fuji Electric

Teilenummer K3515-01MR
Beschreibung MOSFET ( Transistor ) - 2SK3515-01MR
Hersteller Fuji Electric
Logo Fuji Electric Logo 




Gesamt 4 Seiten
K3515-01MR Datasheet, Funktion
2SK3515-01MR
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
450 V
Continuous drain current
ID
±8 A
Pulsed drain current
ID(puls]
±32 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
8A
Maximum Avalanche Energy
EAS
*1
193
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
2.16
35
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
*1 L=5.53mH, Vcc=45V *2 Tch<=150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C
*4 VDS<= 450V
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=450V VGS=0V
VDS=360V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=4A VGS=10V
ID=4A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=4A
VGS=10V
RGS=10
VCC=225V
ID=8A
VGS=10V
L=5.53mH Tch=25°C
IF=8A VGS=0V Tch=25°C
IF=8A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
450
3.0
4
8
Typ. Max. Units
V
5.0 V
25 µA
250
10 100
nA
0.50 0.65
8S
800 1200
pF
120 150
4.5 7
15 23
ns
12 18
25 38
7 11
22 33 nC
9.5 14.5
6.5 10
A
1.00 1.50 V
0.7 µs
3.5 µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max.
3.57
58.0
Units
°C/W
°C/W
1





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