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DG2N60 Schematic ( PDF Datasheet ) - DGME

Teilenummer DG2N60
Beschreibung N-CHANNEL ENHANCEMENT MODE MOSFET
Hersteller DGME
Logo DGME Logo 




Gesamt 11 Seiten
DG2N60 Datasheet, Funktion
DG2N60
N 沟道增强型场效应晶体管
N-CHANNEL ENHANCEMENT MODE MOSFET
版本号:V1.0
产品概述 General Description
DG2N60N沟道增强型场效应晶体管,应用了东光微电的相关专利技术,采用自对准平
面工艺及先进的终端耐压技术,降低了导通损耗,提高了开关特性,增强了雪崩耐量。该
产品能应用于多种功率开关电路,使得电源能效更高,系统更加小型化。
DG2N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s
proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The transistor can be used in various power switching
circuit for higher efficiency and system miniaturization.
主要参数 MAINCHARACTERISTICS
VDSS
ID
RDS(ON)
Crss
600
2
4.7
8.0
V
A
pF
符号 Symbol
封装 Package
1 /11






DG2N60 Datasheet, Funktion
7. 最大安全工作区
Fig. 7 Maximum Safe Operating Area
8. 最大漏极电流随温度变化曲线
Fig. 8 Maximum Drain Current vs Case Temperature
9. 瞬态热响应曲线(TO-251/TO-252)
Fig. 9 Transient Thermal Response Curve
(TO-251/TO-252)
10. 瞬态热响应曲线(TO-220)
Fig. 10 Transient Thermal Response Curve
(TO-220)
11. 瞬态热响应曲线(TO-220F)
Fig. 11 Transient Thermal Response Curve
(TO-220F)
12. 瞬态热响应曲线(TO-126)
Fig. 12 Transient Thermal Response Curve
(TO-126)
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