|
|
Número de pieza | STP12N60M2 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STP12N60M2 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! STP12N60M2
N-channel 600 V, 0.395 Ω typ., 9 A MDmesh™ M2
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max. ID
PTOT
STP12N60M2 600 V 0.450 Ω 9 A 85 W
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STP12N60M2
Table 1: Device summary
Marking
Package
12N60M2
TO-220
Packing
Tube
May 2015
DocID027902 Rev 1
This is information on a product in full production.
1/13
www.st.com
1 page STP12N60M2
Symbol
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 9 A
ISD = 9 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
Electrical characteristics
Min.
-
Typ.
Max. Unit
9A
- 36 A
- 1.6 V
- 284
ns
- 2.4
µC
- 17
A
- 404
- 3.5
ns
µC
- 17.5
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027902 Rev 1
5/13
5 Page STP12N60M2
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
Table 9: TO-220 type A mechanical data
mm
Min.
Typ.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
1.27
16.40
28.90
Package information
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
DocID027902 Rev 1
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet STP12N60M2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STP12N60M2 | N-channel Power MOSFET | STMicroelectronics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |