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UM1556 Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer UM1556
Beschreibung VIPower M0-5 and M0-5Enhanced high-side drivers User manual
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 30 Seiten
UM1556 Datasheet, Funktion
UM1556
User manual
VIPower M0-5 and M0-5Enhanced
high-side drivers
Introduction
The aim of this document is to give the design engineer a comprehensive “tool kit” to better
understand the behavior of VIPower high side switches, allowing easier design and saving
time and money.
Today’s VIPower high side switches represent the 5th generation of smart power drivers (the
so called M0-5). In this latest generation of drivers, all the experience and know-how derived
from previous generations have been implemented in order to improve robustness, increase
functionality and raise package density while maintaining lower prices.
The complexity of a modern High Side Driver (HSD) is still relatively low compared to many
other logic ICs. However, the combination of digital logic functions with analog power
structures supplied by an unstabilized automotive battery system across a wide temperature
range is very challenging for such a device.
The M0-5 components today meet all the above criteria, providing an optimal
price/performance ratio by offering the highest performance and robustness at excellent
prices.
September 2013
Doc ID 023520 Rev 2
1/87
www.st.com






UM1556 Datasheet, Funktion
List of figures
UM1556
Figure 48.
Figure 49.
Figure 50.
Figure 51.
Figure 52.
Figure 53.
Figure 54.
Figure 55.
Figure 56.
Figure 57.
Figure 58.
Figure 59.
Figure 60.
Figure 61.
Figure 62.
External clamping circuitry – border conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Energy sharing between HSD and external clamping circuitry . . . . . . . . . . . . . . . . . . . . . . 59
Appropriate protection circuitry for VN5E025A with DC motor . . . . . . . . . . . . . . . . . . . . . . 61
Demagnetization energy measurement – VND5E025AK, Motor, SMBJ16A and 1N4002 . 63
Demagnetization phase – VND5E025AK, DC motor (blocked), freewheeling diode 1N5401
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Repetitive demagnetization – VND5E025AK (TSD cycling), DC motor, 1N5401 . . . . . . . . 64
Principle of the setup used for the simulations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Direct connection of CS_DIS pins (not recommended) – Monolithic HSD . . . . . . . . . . . . . 72
Proper connection of CS_DIS pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Direct connection of CS_DIS pins (not recommended) – Hybrid HSD . . . . . . . . . . . . . . . . 74
Direct connection of CS_DIS pins (not recommended) – Mix of monolithic and hybrid HSD .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Direct connection of CS pins (not recommended) – Monolithic HSD . . . . . . . . . . . . . . . . . 76
Safe solution for paralleling CS pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Direct connection of CS pins (not recommended) – Hybrid HSD . . . . . . . . . . . . . . . . . . . . 78
Direct connection of CS pins (not recommended) – Mix of monolithic and hybrid HSD . . . 79
6/87 Doc ID 023520 Rev 2

6 Page









UM1556 pdf, datenblatt
General items
UM1556
Reverse battery protection using diode plus resistor
Figure 6. Voltage levels during reverse battery using diode-resistor protection
network
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A diode at the GND terminal prevents a short circuit through the internal substrate diode of
the HSD during reverse mode. A resistor (1 kΩ - package 0805) should be inserted in
parallel to the diode if the device drives an inductive load (to clean up negative voltage
peaks at GND terminal in case of inductive load switch-off). This ground network can be
safely shared amongst several different HSDs. The presence of the ground networkalso
produces a shift (~ 600 mV) in the input threshold and in the status output values. This shift
does not vary if more than one HSD share the same diode/resistor.
A diode at the GND terminal allows the HSD to clamp positive ISO pulses above 50 V
(clamping voltage of the HSD). Negative ISO pulses still pass GND and logic terminals. The
diode should withstand clamped ISO currents in case of positive ISO pulses, and reverse
voltages in case of negative ISO pulses.
Dimensioning of the diode (a):
The most severe positive ISO pulse to consider is test pulse 2 at level IV (50 V @ 50 µs).
This voltage is considered on top of the nominal supply voltage of 13.5 V, so total voltage is
63.5 V. The VIPower has a clamping voltage of typ. 46 V (minimum 41 V/maximum 52 V). In
a typical device, the remaining voltage is 63.5 V - 46 V - 0.7 V = 16.8 V. The ISO pulse
generator interior resistance is given with 2 Ω. Hence the resulting peak current through the
diode is 8.4 A for a duration of 50 µs.
12/87
a. Result:
maximum peak forward current: 8.4 A @ 50 µs
maximum reverse voltage: -100 V
Doc ID 023520 Rev 2

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