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LP3000SOT89 Schematic ( PDF Datasheet ) - Filtronic Compound Semiconductors

Teilenummer LP3000SOT89
Beschreibung LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
Hersteller Filtronic Compound Semiconductors
Logo Filtronic Compound Semiconductors Logo 




Gesamt 3 Seiten
LP3000SOT89 Datasheet, Funktion
LP3000SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
FEATURES
29 dBm Output Power at 1-dB Compression at 1.8 GHz
15 dB Power Gain at 1.8 GHz
1.3 dB Noise Figure
46 dBm Output IP3 at 1.8 GHz
55% Power-Added Efficiency
DESCRIPTION AND APPLICATIONS
The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25 µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP3000 also
features Si3N4 passivation and is available in die form or in other packages.
Typical applications include PCS/Cellular low-voltage, high-efficiency amplifiers.
ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Saturated Drain-Source Current
LP3000SOT89-1
Symbol
IDSS
Test Conditions
VDS = 2 V; VGS = 0 V
LP3000SOT89-2
LP3000SOT89-3
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
P-1dB
G-1dB
PAE
Noise Figure
Output Third-Order Intercept Point
NF
IP3
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
frequency=1.8 GHz
IMAX
GM
IGSO
VP
|VBDGS|
|VBDGD|
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS;
PIN = 15 dBm
VDS = 5 V; IDS = 50% IDSS
VDS = 5V; IDS = 50% IDSS;
PIN = 3 dBm
VDS = 2 V; VGS = 1 V
VDS = 2 V; VGS = 0 V
VGS = -5 V
VDS = 2 V; IDS = 15 mA
IGS = 15 mA
IGD = 15 mA
Min Typ Max Units
800
925
1025
28
14
860
975
1060
29
15
55
924
1024
1100
mA
mA
mA
dBm
dB
%
1.3 dB
46 dBm
700
-0.25
-10
1700
900
15
-1.2
-12
200
-2.0
mA
mS
µA
V
V
-10 -13
V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/16/02





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