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LP3000P100 Schematic ( PDF Datasheet ) - Filtronic Compound Semiconductors

Teilenummer LP3000P100
Beschreibung PACKAGED 2W POWER PHEMT
Hersteller Filtronic Compound Semiconductors
Logo Filtronic Compound Semiconductors Logo 




Gesamt 3 Seiten
LP3000P100 Datasheet, Funktion
FEATURES
33 dBm Output Power at 1-dB Compression at 15 GHz
8 dB Power Gain at 15 GHz
60% Power-Added Efficiency
LP3000P100
PACKAGED 2W POWER PHEMT
DESCRIPTION AND APPLICATIONS
The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25 µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP3000 also
features Si3N4 passivation and is available in die form or in other packages.
The LP3000P100 is designed for medium-power, linear amplification. This device is suitable for
applications in commercial and military environments, and it is appropriate to be used as a medium
power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high
efficiency amplifiers, and WLL systems.
ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Symbol
IDSS
P-1dB
G-1dB
PAE
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
frequency=15 GHz
IMAX
GM
IGSO
VP
|VBDGS|
|VBDGD|
Test Conditions
VDS = 2 V; VGS = 0 V
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS;
PIN = 17 dBm
VDS = 2 V; VGS = 1 V
VDS = 2 V; VGS = 0 V
VGS = -5 V
VDS = 2 V; IDS = 5 mA
IGS = 8 mA
IGD = 8 mA
Min Typ Max Units
800 975 1100 mA
31.5 33
dBm
78
dB
45 %
700
-0.25
-12
1700
900
15
-1.2
-15
130
-2.0
mA
mS
µA
V
V
-12 -16
V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/20/01





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