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Número de pieza | RF3300-3 | |
Descripción | LINEAR AMPLIFIER MODULE | |
Fabricantes | RF Micro Devices | |
Logotipo | ||
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Typical Applications
• 3V CDMA US-PCS Handsets
• 3V CDMA2000/1X PCS Handsets
• Spread-Spectrum Systems
RF3300-3
3V 1900MHz LINEAR AMPLIFIER MODULE
• Designed for Compatibility with Qualcomm
Chipsets
Product Description
The RF3300-3 is a high-power, high-efficiency linear
amplifier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA handheld digital cellular equipment, spread-
spectrum systems, and other applications in the
1850MHz to 1910MHz band. The RF3300-3 has a digital
control line for low power application to reduce the cur-
rent drain. The device is self-contained with 50Ω input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. This amplifier con-
tains a temperature compensating bias circuit for
improved performance over temperature.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
InGaP/HBT
SiGe HBT
Si CMOS
9GaN HEMT
SiGe Bi-CMOS
VCC3 1
GND 2
GND 3
RF IN 4
VCC1 5
12 11
Pwr
Det
Bias
10 PDET_OUT
9 VCC2
8 RF OUT
7 GND
6 GND
Functional Block Diagram
7.375 TYP
6.775
6.575 TYP
5.875 TYP
5.075 TYP
4.375 TYP
3.575 TYP
2.875 TYP
2.075 TYP
1
NOTES:
Nominal thickness, 1.55
mm.
Note orientation of Pin 1.
0.925 TYP
0.125 TYP
0.000
Dimensions in mm.
Bottom View
Package Style: Module (6mmx7.5mm)
Features
• Single 3V Supply with Internal VREF
• Integrated Power Detector
• 25dB Linear Gain
• 40mA Idle Current (Low Power Mode)
• Temperature Compensating Bias Circuit
• Integrated PA Enable Switch
Ordering Information
RF3300-3
3V 1900MHz Linear Amplifier Module
RF3300-3 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A5 030612
2-547
1 page RF3300-3
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
PA_ON
VMODE
VCC3
J1
RF IN
VCC1
C3
2.2 µF
50 Ω µstrip
C1
2.2 µF
1
2
3
4
5
R2
100 kΩ
R3
100 kΩ
12 11
Pwr
Det
Bias
10
9
8
7
C4
10 nF
R1
1 kΩ
C2
2.2 µF
50 Ω µstrip
PDET_OUT
VCC2
J2
RF OUT
6
NOTE:
Resistors R2 and R3 are provided on the evaluation board to protect against power sequencing
issues. (Refer to pin descriptions 11 and 12.) These resistors are not needed when the VCC3 is
connected to the handset battery.
Rev A5 030612
2-551
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RF3300-3.PDF ] |
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