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PDF A64S16161 Data sheet ( Hoja de datos )
| Número de pieza | A64S16161 | |
| Descripción | 2M X 16 Bit Low Voltage Super RAM | |
| Fabricantes | AMIC Technology | |
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Preliminary
A64S16161
2M X 16 Bit Low Voltage Super RAM
Features
● Memory Cell : Dynamic memory( DRAM )
● Refresh: Completely free
● Power Down: Control by CS2( No Data Retention )
● Byte Control : Capable of single byte operation
● Power Consumption: 100μA( Standby Current )
● Operating Temperature Range: -40’C~+85’C
● Composition:2,097,152 Word X 16 Bit
● Supply Power Voltage:2.70V to 3.30V
● Access Time: 70nS
● Access Time ( Page Access Read ): 30nS
● I/O Terminal :Input / Output Common 3-state output
Pin Description
Pin Name Description
CS1#
Chip select 1 ( Low Active )
CS2
Chip select 2 ( High Active )
WE#
Write enable ( Low Active )
OE#
Output enable ( Low Active )
A0 to A20
Address Input ( A0 to A2 : Page Address)
IO0-7
Lower Byte Input / Output
IO8-15
Upper Byte Input / Output
LB# Lower Byte Control ( Low Active )
UB#
Upper Byte Control ( Low Active )
VCC
Power Supply
VSS
Ground ( 0V)
A
B
C
D
E
F
G
H
123456
LB# OE# A0 A1 A2 CE2
DQ8 UB# A3
A4
CE1#
DQ0
DQ9 DQ10 A5
A6 DQ1 DQ2
VSS DQ11 A17 A7
DQ3 VCC
VCC DQ12 NC
A16 DQ4 VSS
DQ14 DQ13 A14 A15 DQ5 DQ6
DQ15 A19 A12 A13 WE# DQ7
A18 A8 A9 A10 A11 A20
Description
A64S16161 is a virtually static RAM, which uses DRAM type memory cells, but it has refresh transparency, so that you need
not to imply refresh operation. Furthermore the interface is completely compatible to a low power Asynchronous type SRAM, you
can operate as same as the Asynchronous SRAM.
A64S16161 is a 2,097,152 Words X 16 bit asynchronous random access memory on a monolithic CMOS chip with
marvelous low power consumption technology. Its low power and also low noise makes it ideal for mobile applications.
PRELIMINARY (December, 2003, Version 0.0)
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AMIC Technology Corp.
1 page  
ELECTRICAL CHARACTERISTICS
DC Recommended Operating Conditions (Ta=-40~85＇C)
Parameter
Symbo1
Min
Max Unit
VCC
2.70
3.30
V
Supply voltage
VSS
0
0V
Input voltage
VIH
VIL
VCC-0.3
-0.3*
* If pulse width is less than 5ns it is –1.0V
VCC+0.3
0.3
V
V
A64S16161
DC ELECTRICAL CHARACTERISTICS
DC Characteristics (Ta=-40~85’C)
Parameter
Symbol
Condition
Min Typ*¹
Input leakage current
ILI
VI=0V to VCC
-1
Output leakage current ILO LB# and UB#=H or CS1#=H or WE#=L -1
or OE#=H or CS2=L VI/O=0V to VCC
High level output voltage VOH
IOH=-0.5ｍA
Vcc-0.3
Low level output voltage VOL
Power Down Current IDDPD
IOL=0.5ｍA
CS2≦0.2V
﹣
﹣
Standby Current
IDDS
VCC-0.2V≦CS1#
﹣
Operating current
IDDA1
I I/O=0ｍA, tcyc=70ns*²
﹣
Operating current IDDA2
I I/O=0ｍA, tcyc=1uS*²
﹣
Operating current IDDA3
I I/O=0ｍA, tcyc=70ns*³
-
﹣
﹣
﹣
﹣
﹣
60
25
3.0
20
*1:Typical values are measured at Ta=25’C and VCC =3.0V
*2:Random access
*3:Page access read
Max
1
1
﹣
0.3
25
100
30
3.5
30
Unit
µA
µA
V
V
µA
µA
ｍA
ｍA
ｍA
Terminal Capacitance
(Ta=25’C f=1MHz)
Parameter
Symbol Conditions Min Max Unit
Input Capacitance CI
VI=0V
﹣ 8 pF
I/O Capacitance C I/O V I/O=0V ﹣ 10 pF
Note：This parameter is measured by sampling , not of all products.
PRELIMINARY (December, 2003, Version 0.0)
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AMIC Technology Corp.
5 Page 
Write Cycle ( LB # / UB # Control )
Address
CS1#
LB# / UB#
WE#
Din
tWC
tAW
tCW
tBW
tAS
tWR
tWP
tDW tDH
CS2 and OE # must be H level for entire read cycle.
Standby
CS1#
Active
tC1H
Standby
A64S16161
Active
PRELIMINARY (December, 2003, Version 0.0)
11
AMIC Technology Corp.
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet A64S16161.PDF ] | |
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