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PDF ACE7333M Data sheet ( Hoja de datos )
| Número de pieza | ACE7333M | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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ACE7333M
P-Channel 30-V (D-S) MOSFET
Description
The ACE7333M uses advanced trench technology to provide excellent RDS(ON), low gate charge. This
device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Applications
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY
VDS (V)
rDS(on) (mΩ)
ID(A)
-30 20 @ VGS = -10V -10.9
36 @ VGS = -4.5V -8.1
Absolute Maximum Ratings
Parameter
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
TA=25 OC
TA=70 OC
Pulse Drain Current b
Continuous Drain Current (Diode Continuous) a
Power Dissipation a
TA=25 OC
TA=70 OC
Operating Junction and Storage Temperature Range
VDS 30
VGS ±20
-10.9
ID -8.2
IDM -50
IS -4.5
3.5
PD 2
TJ,TSTG -55 to 150
V
V
A
A
W
OC
Parameter
Maximum Junction-to-Ambient a
t≦10sec
Steady State
Symbol
RθJA
Maximum
35
81
Units
℃/W
℃/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1 1
1 page  
Packing Information
DFN3*3-8L
ACE7333M
P-Channel 30-V (D-S) MOSFET
DIM MILLIMETERS
INCHES
MIN
NOM
MAX
MIN
NOM
MAX
A
0.700
0.80
0.900 0.0276 0.0315 0.0354
A1 0.00
0.05 0.000
0.002
b
0.24
0.30
0.35
0.009
0.012
0.014
c
0.10
0.152
0.25
0.004
0.006
0.010
D 3.00 BSC
0.118 BSC
D1 2.35 BSC
0.093 BSC
E 3.20 BSC
0.126 BSC
E1 3.00 BSC
0.118 BSC
E2 1.75 BSC
0.069 BSC
E3 0.575 BSC
0.023 BSC
e 0.65 BSC
0.026 BSC
L
0.45
0.55
0.65
0.018
0.022
0.026
L1 0
0.15 0
0.006
θ1
0O
10O 12 O
0O
10 O
12O
VER 1.1 5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ACE7333M.PDF ] | |
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