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Datasheet TK4P55DA Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 TK4P55DA   MOSFETs

TK4P55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4P55DA Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 55
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet TK4P55DA pdf

TK4P5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
TK4P55DA

MOSFETs

TK4P55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4P55DA Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TK4P55D

MOSFETs

TK4P55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4P55D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current: IDSS =
 Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor
TK4P50D

MOSFETs

TK4P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4P50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 1.5 S (typ.) Low leakage current: IDSS
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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