|
|
Datasheet SSM3J109TU Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | SSM3J109TU | Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J109TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• • 1.8 V drive Low ON-resistance: Ron = 300 mΩ (max) (@VGS = -1.8 V) Ron = 130 mΩ (max) (@VGS = -4.0 V)
0.65 |
Toshiba Semiconductor |
SSM3J10 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
SSM3J109TU | Field-Effect Transistor Silicon P-Channel MOS Type |
Toshiba Semiconductor |
|
SSM3J108TU | Field Effect Transistor Silicon P-Channel MOS Type |
Toshiba Semiconductor |
Esta página es del resultado de búsqueda del SSM3J109TU. Si pulsa el resultado de búsqueda de SSM3J109TU se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |