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Datasheet SI4936 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | SI4936 | Dual N-Channel Enhancement Mode MOSFET Si4936DY
June 1999
Si4936DY*
Dual N-Channel Enhancement Mode MOSFET
General Description
These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching perfor |
 Fairchild Semiconductor |
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| 5 | SI4936 | Dual N-Channel 30-V (D-S) MOSFET Si4936ADY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
5.9 4.9
rDS(on) (W)
0.036 @ VGS = 10 V 0.053 @ VGS = 4.5 V
D TrenchFETr Power MOSFET
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: Si4936ADY Si4936ADY-T1 (with Ta |
 Vishay Siliconix |
|
| 4 | SI4936ADY | Dual N-Channel 30-V (D-S) MOSFET Si4936ADY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
5.9 4.9
rDS(on) (W)
0.036 @ VGS = 10 V 0.053 @ VGS = 4.5 V
D TrenchFETr Power MOSFET
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: Si4936ADY Si4936ADY-T1 (with Ta |
Vishay Siliconix |
|
| 3 | SI4936ADY-T1 | Dual N-Channel 30-V (D-S) MOSFET Si4936ADY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)
5.9 4.9
rDS(on) (W)
0.036 @ VGS = 10 V 0.053 @ VGS = 4.5 V
D TrenchFETr Power MOSFET
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: Si4936ADY Si4936ADY-T1 (with Ta |
Vishay Siliconix |
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