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Datasheet MTD6N20E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | MTD6N20E | Power MOSFET 6 Amps
MTD6N20E
Preferred Device
Power MOSFET 6 Amps, 200 Volts
N−Channel DPAK
This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. D |
ON Semiconductor |
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1 | MTD6N20E | TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD6N20E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high energy in the avalanch |
Motorola Semiconductors |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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