Datasheet IXGT32N60BD1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IXGT32N60BD1	HiPerFAST IGBTwith Diode HiPerFASTTM IGBT with Diode IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC =	IXYS Corporation

IXGT32N60 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IXGT32N60BD1	HiPerFAST IGBTwith Diode HiPerFASTTM IGBT with Diode IXGH 32N60BD1 IXGT 32N60BD1 VCES IC25 VCE(sat) tfi(typ) = 600 V = 60 A = 2.3 V = 85 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Trans	IXYS Corporation
IXGT32N60C	(IXGH32N60C / IXGT32N60C) HiPerFAST IGBT Lightspeed Series HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C VCES IC25 VCE(sat)typ tfi typ = 600 V = 60 A = 2.1 V = 55 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE	IXYS Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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