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Datasheet HVV1011-035 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | HVV1011-035 | RF transistor DESCRIPTION
The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz.
PACKAGE
FEATURES
High Power Gain Excellent Ruggedness 50V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbo |
 ASI |
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| 1 | HVV1011-035 | Power Transistor HVV1011-040
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The innovative SemiconducHLtL1o-VBH0HLr-B3C-VaVVB0ano1V-nVadm21dn111R0pd00A49aa11-A0nvd011iMyva7o--!ir05 |
 HVVi |
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