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Datasheet 2SK3418 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK3418 | Silicon N Channel MOS FET 2SK3418
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4.3 m typ.
• 4 V gate drive device • High speed switching
Outline
TO-220AB
D
G
S
ADE-208-941 (Z) 1st. Edition Mar. 2001
1 2 3
1. Gate 2. Drain (Flange) 3. Source
2SK3418
Absolute Maximum R |
 Hitachi Semiconductor |
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| 1 | 2SK3418 | Silicon N Channel MOS FET 2SK3418
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4.3 mΩ typ.
• Capable of 4 V gate drive • High speed switching
Outline
TO-220AB
D
G
S1 2 3
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain |
 Renesas |
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