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Datasheet 2SD1760 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SD1760 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1760
DESCRIPTION ·Low VCE(sat) ·Small and slim package ·Complements the 2SB1184 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power dissipation
ABSOLUTE MAX |
 Inchange Semiconductor |
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| 3 | 2SD1760 | NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente
2SD1760
3A , 60V NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Low VCE(sat). VCE(sat) = 0.5V(Typ.) (IC/IB = 2A / 0.2A) Complements the 2SB1184
D-Pack (TO-252)
CLASSIFICATION OF hFE
Pr |
 SeCoS |
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| 2 | 2SD1760 | NPN Transistors SMD Type
NPN Transistors 2SD1760
Transistors
■ Features
● Low VCE (sat) ● Complementary to 2SB1184
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30 +0.1 -0.1
0.50 +0.8 -0.7
+ 0.151 .5 0 -0.15
0.80+0.1 -0.1
0.127 m ax
+ 0.155 .5 5 -0.15
3.80
Unit: mm
+2.65 0.25 -0.1
+0.50 0.15 -0.15
+1.50 |
 Kexin |
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| 1 | 2SD1760 | Power Transistor Power Transistor (50V, 3A)
2SD1760 / 2SD1864
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243.
Structure Epitaxial planar type NPN silicon transistor
Dimensions (Unit : mm)
2SD1760
6.5±0.2
5.1
+0.2 −0.1
C0.5
2.3
+0.2 −0. |
 ROHM Semiconductor |
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