DataSheet.es    


PDF CMPA2560025F Data sheet ( Hoja de datos )

Número de pieza CMPA2560025F
Descripción GaN MMIC Power Amplifier
Fabricantes CREE 
Logotipo CREE Logotipo



Hay una vista previa y un enlace de descarga de CMPA2560025F (archivo pdf) en la parte inferior de esta página.


Total 11 Páginas

No Preview Available ! CMPA2560025F Hoja de datos, Descripción, Manual

CMPA2560025F
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to Si and GaAs transistors. This MMIC contains a
two-stage reactively matched amplifier enabling very wide bandwidths to
be achieved in a small footprint screw-down package featuring a Copper-
Tungsten heat-sink.
PaPckNa:gCeMTPyApe2:576800002159F
Typical Performance Over 2.5-6.0 GHz (TC = 25˚C)
Parameter
2.5 GHz
4.0 GHz
6.0 GHz
Gain
27.5 24.3 23.1
Saturated
Output
Power,
P1
SAT
35.8 37.5 25.6
Power Gain @ POUT 43 dBm
23.1 20.9 16.3
PAE @ POUT 43 dBm
31.5 32.8 30.7
Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.
Units
dB
W
dB
%
Features
24 dB Small Signal Gain
25 W Typical PSAT
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation
Applications
Ultra Broadband Amplifiers
Fiber Drivers
Test Instrumentation
EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/rf
Figure 1.
1

1 page




CMPA2560025F pdf
Typical Performance
2ND Harmonic vs Output Power
as a Function of Frequency
0
2.5 GHz
-10 4.0 GHz
6.0 GHz
-20
-30
-40
-50
-60
-70
22 24 26 28 30 32 34 36 38 40 42 44 46
Output Power, POUT (dBm)
IM3 vs Total Average Power
as a Function of Frequency
0
-5
-10 2.5 GHz
4.0 GHz
-15 6.0 GHz
-20
-25
-30
-35
-40
-45
-50
-55
-60
22 24 26 28 30 32 34 36 38 40 42 44
Total Average Output Power (dBm)
Gain at POUT of 40 dBm at
25°C & 75°C vs Frequency
30
25
20
15
Ambient (25°C)
10
Hot (75°C)
5
0
2.5 2.8 3.1 3.4 3.7
Frequency (GHz)
Note: The temperature coefficient is -0.05 dB/°C
4.0
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5 CMPA2560025F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

5 Page





CMPA2560025F arduino
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
11 CMPA2560025F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

11 Page







PáginasTotal 11 Páginas
PDF Descargar[ Datasheet CMPA2560025F.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
CMPA2560025FGaN MMIC Power AmplifierCREE
CREE

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar