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Número de pieza | CMPA0060002F | |
Descripción | GaN MMIC Power Amplifier | |
Fabricantes | CREE | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CMPA0060002F (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CMPA0060002F
2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to Si and GaAs transistors. This MMIC employs a
distributed (traveling-wave) amplifier design approach, enabling extremely
wide bandwidths to be achieved in a small footprint screw-down package
featuring a copper-tungsten heat sink.
PaPckNa:gCeMTPyApe0:076800000129F
Typical Performance Over 20 MHz - 6.0 GHz (TC = 25˚C)
Parameter
Gain
20 MHz
19.9
0.5 GHz
18.8
1.0 GHz
17.8
2.0 GHz
16.8
3.0 GHz
16.8
4.0 GHz
17.5
5.0 GHz
18.5
Saturated
Output
Power,
P1
SAT
4.3 4.1 4.5 4.2 3.7 3.9 4.8
Power
Gain
@
P1
SAT
14.7 13.1 12.6 12.2 12.6 10.9 12.2
PAE
@
P1
SAT
34 28 29 28 24 26 33
Note1: PSAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA.
Note2: VDD = 28 V, IDQ = 100 mA
6.0 GHz
16.5
3.7
9.5
20
Units
dB
W
dB
%
Features
• 17 dB Small Signal Gain
• 3 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• 0.5” x 0.5” total product size
Applications
• Ultra Broadband Amplifiers
• Fiber Drivers
• Test Instrumentation
• EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/rf
Figure 1.
1
1 page General Device Information
The CMPA0060002F is a GaN HEMT MMIC Distributed Driver Amplifier, which operates between 20 MHz - 6.0 GHz. The ampli-
fier typically provides 17 dB of small signal gain and 2 W saturated output power with an associated power added efficiency of better
than 20 %. The wideband amplifier’s input and output are internally matched to 50 Ohm. The amplifier requires bias from appropriate
Bias-T’s, through the RF input and output ports.
The CMPA0060002F is provided in a flange package format. The input and output connections are gold plated to enable gold
bond wire attach at the next level assembly.
The measurements in this data sheet were taken on devices wire-bonded to the test fixture with 2 mil gold bond wires. The
CMPA0060002F-AMP and the device were then measured using external Bias-T’s, (Aeroflex: 8800, SMF3-12; TECDIA: AMPT-06M20 or
similar), as shown in Figure 2. The Bias-T’s were included in the calibration of the test system. All other losses associated with the test
fixture are included in the measurements.
VGG
VDD
RF In
RF Out
Input Bias T
Output Bias T
CMMPPAA2050660002F mounted
in the test fixture
Figure 2. Typical test system setup required for measuring CMPA0060002F-AMP
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5 CMPA0060002F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet CMPA0060002F.PDF ] |
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