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EGP30A Schematic ( PDF Datasheet ) - Taiwan Semiconductor

Teilenummer EGP30A
Beschreibung Glass Passivated High Efficient Plastic Rectifiers
Hersteller Taiwan Semiconductor
Logo Taiwan Semiconductor Logo 




Gesamt 2 Seiten
EGP30A Datasheet, Funktion
EGP30A THRU EGP30K
Features
3.0 AMPS. Glass Passivated High Efficient Plastic Rectifiers
Voltage Range
50 to 800 Volts
Current
3.0 Amperes
DO-201
Plastic material used carries Underwriters Laboratories
Classification 94V-O
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high current capability
Low leakage current
High surge current capability
High temperature metallurgically bonded construction
High temperature soldering guaranteed:
300/ 10seconds, .375”(9.5mm) lead length at 5 lbs.,
(2.3kg) tension
Mechanical Data
Case: JEDEC DO-201 molded plastic over solid glass body
Lead: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.048 ounce, 1.28 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol EGP EGP EGP EGP EGP EGP EGP
30A 30B 30D 30F 30G 30J 30K
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375”(9.5mm) Lead Length
@ TA = 55
VRRM
VRMS
VDC
I(AV)
50 100 200 300 400 600 800
35 70 140 210 280 420 560
50 100 200 300 400 600 800
3.0
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
125
Maximum Instantaneous Forward Voltage
@ 3.0A
VF
0.95
1.25 1.7
Maximum DC Reverse Current @ TA=25
at Rated DC Blocking Voltage @ TA=125
IR
5.0
100
Maximum Reverse Recovery Time ( Note 1 )
TA=25oC
Typical Junction Capacitance ( Note 2 )
Trr
Cj
50
60
75
50
Typical Thermal Resistance (Note 3)
RθJA
40
Operating and Storage Temperature Range TJ TSTG
-65 to + 150
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
Units
V
V
V
A
A
V
uA
uA
nS
pF
/W
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