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GW30V60DF Schematic ( PDF Datasheet ) - STMicroelectronics

Teilenummer GW30V60DF
Beschreibung STGW30V60DF
Hersteller STMicroelectronics
Logo STMicroelectronics Logo 




Gesamt 22 Seiten
GW30V60DF Datasheet, Funktion
STGB30V60DF, STGP30V60DF,
STGW30V60DF, STGWT30V60DF
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet - production data
TAB
3
1
D²PAK
TAB
3
2
1
TO-220
TAB
3
2
1
TO-247
3
2
1
TO-3P
Figure 1. Internal schematic diagram
C (2, TAB)
Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.85 V (typ.) @ IC = 30 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
G (1) Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
E (3) between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order codes
STGB30V60DF
STGP30V60DF
STGW30V60DF
STGWT30V60DF
Table 1. Device summary
Marking
Package
GB30V60DF
GP30V60DF
GW30V60DF
GWT30V60DF
D²PAK
TO-220
TO-247
TO-3P
Packaging
Tape and reel
Tube
Tube
Tube
October 2013
This is information on a product in full production.
DocID024361 Rev 4
1/22
www.st.com
22






GW30V60DF Datasheet, Funktion
Electrical characteristics
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Figure 8. Collector current vs. switching
frequency
IC (A)
80
70
TC=80°C
AM17415v1
60 TC=100°C
50
40
30
20
rectangular current shape,
10
(duty cycle=0.5, Vcc= 400V Rg=10Ω,
Vge=0/15V, Tj=175 °C)
0
1 10
f(kHz)
Figure 10. Transfer characteristics
IC (A)
AM17417v1
Tj=-40°C
100 Tj=175°C
Tj=25°C
80
60
40
20
Figure 9. Forward bias safe operating area
IC (A)
AM17416v1
100
10
1
Single pulse, Tc=25°C
Tj<175°C, VGE=15V
0.1
10μs
100μs
1ms
0.01
1
10 100 VCE(V)
Figure 11. Diode VF vs. forward current
VF(A)
Tj=-40°C
AM17418v1
2.3
Tj=25°C
1.9
Tj=175°C
1.5
0
7 8 9 10 11 VGE(V)
1.1
10 20 30 40 50 60 IF(A)
Figure 12. Normalized VGE(th) vs junction
temperature
VGE(th)
(norm)
1.0
VCE=VGE
IC=1mA
AM17419v1
Figure 13. Normalized V(BR)CES vs. junction
temperature
V(BR)CES
(norm)
IC=2mA
AM17420v1
1.1
0.9
1.0
0.8
0.7
0.6
-50
0
50 100 150
TC(°C)
0.9
-50
0
50 100 150
TC(°C)
6/22 DocID024361 Rev 4

6 Page









GW30V60DF pdf, datenblatt
Package mechanical data
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF
Figure 32. D²PAK (TO-263) drawing
Figure 33. D²PAK footprint(a)
16.90
0079457_T
12.20
1.60
5.08
9.75
3.50
a. All dimensions are in millimeters
12/22
DocID024361 Rev 4
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