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Teilenummer | RJS6005TDPP-EJ |
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Beschreibung | SiC Schottky Barrier Diode | |
Hersteller | Renesas | |
Logo | ||
Gesamt 4 Seiten RJS6005TDPP-EJ
600V - 15A - Diode
SiC Schottky Barrier Diode
Features
• New semiconductor material: Silicon Carbide Diode
• No reverse recovery / No forward recovery
Outline
RENESAS Package code: PRSS0002ZA-A
(Package name: TO-220FP-2L)
12
Preliminary Datasheet
R07DS0900EJ0300
Rev.3.00
Jan 23, 2014
1
1. Cathode
2. Anode
2
Absolute Maximum Ratings
Item
Maximum reverse voltage
Continuous forward current
Peak surge forward current
Junction temperature
Storage temperature
Electrical Characteristics
Symbol
VRM
IF
IFSM
Tj
Tstg
Item
Forward voltage
Reverse current
Reverse recovery time
Symbol
VF
IR
trr
Min
⎯
⎯
⎯
Typ
1.5
⎯
15
Ratings
600
15
90
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
°C
°C
(Ta = 25°C)
Max Unit
Test conditions
1.8 V IF = 15 A
10 μA VR = 600 V
⎯ ns IF = 15 A, di/dt = 300A/μs
R07DS0900EJ0300 Rev.3.00
Jan 23, 2014
Page 1 of 3
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ RJS6005TDPP-EJ Schematic.PDF ] |
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