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Teilenummer | RJK0631JPD |
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Beschreibung | Silicon N-Channel MOS FET | |
Hersteller | Renesas | |
Logo | ||
Gesamt 7 Seiten RJK0631JPD
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• For Automotive application
• Low on-resistance : RDS(on) = 12 mΩ typ.
• Capable of 4.5 V gate drive
• Low input capacitance: Ciss = 1350 pF typ
• AEC-Q101 compliant
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
4
123
1G
Preliminary Datasheet
R07DS0252EJ0300
Rev.3.00
Jul 24, 2013
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10μs duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAP Note2
EAR Note2
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
• Channel to case thermal impedance θch-c: 3.33°C/W
Value
60
±20
30
120
30
120
27
62.5
45
175
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
R07DS0252EJ0300 Rev.3.00
Jul 24, 2013
Page 1 of 6
RJK0631JPD
Package Dimensions
Package Name
DPAK(S)
JEITA Package Code
SC-63
RENESAS Code
Previous Code
MASS[Typ.]
PRSS0004ZD-C DPAK(S) / DPAK(S)V
0.28g
6.5 ± 0.3
5.6 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
(5.1)
1.0 Max.
2.29 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
0 – 0.25
0.55 ± 0.1
Preliminary
Unit: mm
Ordering Information
Orderable Part Number
Quantity
Shipping Container
RJK0631JPD-00-J0
3000 pcs
Taping (Left-winded)
Note: The symbol of 2nd "-" is occasionally presented as "#".
R07DS0252EJ0300 Rev.3.00
Jul 24, 2013
Page 6 of 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RJK0631JPD Schematic.PDF ] |
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