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RJK0631JPD Schematic ( PDF Datasheet ) - Renesas

Teilenummer RJK0631JPD
Beschreibung Silicon N-Channel MOS FET
Hersteller Renesas
Logo Renesas Logo 




Gesamt 7 Seiten
RJK0631JPD Datasheet, Funktion
RJK0631JPD
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
For Automotive application
Low on-resistance : RDS(on) = 12 mΩ typ.
Capable of 4.5 V gate drive
Low input capacitance: Ciss = 1350 pF typ
AEC-Q101 compliant
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
4
123
1G
Preliminary Datasheet
R07DS0252EJ0300
Rev.3.00
Jul 24, 2013
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10μs duty cycle 1%
2. Tch = 25°C, Rg 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAP Note2
EAR Note2
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
Channel to case thermal impedance θch-c: 3.33°C/W
Value
60
±20
30
120
30
120
27
62.5
45
175
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
R07DS0252EJ0300 Rev.3.00
Jul 24, 2013
Page 1 of 6






RJK0631JPD Datasheet, Funktion
RJK0631JPD
Package Dimensions
Package Name
DPAK(S)
JEITA Package Code
SC-63
RENESAS Code
Previous Code
MASS[Typ.]
PRSS0004ZD-C DPAK(S) / DPAK(S)V
0.28g
6.5 ± 0.3
5.6 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
(5.1)
1.0 Max.
2.29 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
0 0.25
0.55 ± 0.1
Preliminary
Unit: mm
Ordering Information
Orderable Part Number
Quantity
Shipping Container
RJK0631JPD-00-J0
3000 pcs
Taping (Left-winded)
Note: The symbol of 2nd "-" is occasionally presented as "#".
R07DS0252EJ0300 Rev.3.00
Jul 24, 2013
Page 6 of 6

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