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Número de pieza | GBU10G | |
Descripción | Silicon Bridge Rectifier | |
Fabricantes | GeneSiC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GBU10G (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! GBU10A thru GBU10G
Single Phase Glass Passivated
Silicon Bridge Rectifier
VRRM = 50 V - 400 V
IO = 10 A
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High case dielectric strength of 1500 VRMS
• Glass passivated chip junction
• Ideal for printed circuit boards
• High surge overload rating
• High temperature soldering guaranteed: 260⁰C/ 10
seconds, 0.375 (9.5mm) lead length
• Not ESD Sensitive
GBU Package
Mechanical Data
Case: Molded plastic body over passivated junctions
Terminals: Plated leads, solderable per MIL-STD-750 Method 2026.
Mounting position: Any
Maximum ratings at Tc = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
GBU10A
50
35
50
-55 to 150
-55 to 150
GBU10B
100
70
100
-55 to 150
-55 to 150
GBU10D
200
140
200
-55 to 150
-55 to 150
GBU10G
400
280
400
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
GBU10A
Maximum average forward rectified
current 1,2
Peak forward surge current
Maximum instantaneous forward
voltage drop per leg
IO Tc = 100 °C
IFSM tp = 8.3 ms, half sine
VF IF = 10 A
10.0
220
1.1
Maximum DC reverse current at
rated DC blocking voltage per leg
Typical junction capacitance per
leg 3
Typical thermal resistance per leg 1,2
IR
Cj
RΘJC
Ta = 25 °C
Ta = 125 °C
5
500
70
2.2
1 - Device mounted on 100 mm x 100 mm x 1.6 mm Cu plate heatsink
2 - Recommended mounted position is to bolt down device on a heatsink with silicon
thermal compond for maximum heat transfer using #6 screw.
3 - Measured at 1.0 MHz and applied reverse bias of 4.0 V
GBU10B
10.0
220
1.1
5
500
70
2.2
GBU10D
10.0
220
1.1
5
500
70
2.2
GBU10G Unit
10.0 A
220 A
1.1 V
5 μA
500
70 pF
2.2 °C/W
www.genesicsemi.com/silicon-products/bridge-rectifiers/
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet GBU10G.PDF ] |
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