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W632GU6KB Schematic ( PDF Datasheet ) - Winbond

Teilenummer W632GU6KB
Beschreibung 16M x 8-BANKS x 16-BIT DDR3L SDRAM
Hersteller Winbond
Logo Winbond Logo 




Gesamt 30 Seiten
W632GU6KB Datasheet, Funktion
W632GU6KB
16M 8 BANKS 16 BIT DDR3L SDRAM
Table of Contents-
1. GENERAL DESCRIPTION ...................................................................................................................5
2. FEATURES ...........................................................................................................................................5
3. ORDER INFORMATION .......................................................................................................................6
4. KEY PARAMETERS .............................................................................................................................7
5. BALL CONFIGURATION ......................................................................................................................8
6. BALL DESCRIPTION............................................................................................................................9
7. BLOCK DIAGRAM ..............................................................................................................................11
8. FUNCTIONAL DESCRIPTION............................................................................................................12
8.1 Basic Functionality ..............................................................................................................................12
8.2 RESET and Initialization Procedure ....................................................................................................12
8.2.1
Power-up Initialization Sequence .....................................................................................12
8.2.2
Reset Initialization with Stable Power ..............................................................................14
8.3 Programming the Mode Registers.......................................................................................................15
8.3.1
Mode Register MR0 .........................................................................................................17
8.3.1.1
Burst Length, Type and Order ................................................................................18
8.3.1.2
CAS Latency...........................................................................................................18
8.3.1.3
Test Mode...............................................................................................................19
8.3.1.4
DLL Reset...............................................................................................................19
8.3.1.5
Write Recovery .......................................................................................................19
8.3.1.6
Precharge PD DLL .................................................................................................19
8.3.2
Mode Register MR1 .........................................................................................................20
8.3.2.1
DLL Enable/Disable................................................................................................20
8.3.2.2
Output Driver Impedance Control ...........................................................................21
8.3.2.3
ODT RTT Values ....................................................................................................21
8.3.2.4
Additive Latency (AL) .............................................................................................21
8.3.2.5
Write leveling ..........................................................................................................21
8.3.2.6
Output Disable........................................................................................................21
8.3.3
Mode Register MR2 .........................................................................................................22
8.3.3.1
Partial Array Self Refresh (PASR) ..........................................................................23
8.3.3.2
CAS Write Latency (CWL) ......................................................................................23
8.3.3.3
Auto Self Refresh (ASR) and Self Refresh Temperature (SRT) .............................23
8.3.3.4
Dynamic ODT (Rtt_WR) .........................................................................................23
8.3.4
Mode Register MR3 .........................................................................................................24
8.3.4.1
Multi Purpose Register (MPR) ................................................................................24
8.4 No OPeration (NOP) Command..........................................................................................................25
8.5 Deselect Command.............................................................................................................................25
8.6 DLL-off Mode ......................................................................................................................................25
8.7 DLL on/off switching procedure...........................................................................................................26
8.7.1
DLL onto DLL offProcedure ..........................................................................26
8.7.2
DLL offto DLL onProcedure ..........................................................................27
8.8 Input clock frequency change..............................................................................................................28
8.8.1
Frequency change during Self-Refresh............................................................................28
8.8.2
Frequency change during Precharge Power-down ..........................................................28
8.9 Write Leveling .....................................................................................................................................30
Publication Release Date: Jan. 20, 2015
Revision: A06
-1-






W632GU6KB Datasheet, Funktion
W632GU6KB
System level timing calibration support via write leveling and MPR read pattern
ZQ Calibration for output driver and ODT using external reference resistor to ground
Asynchronous RESET# pin for Power-up initialization sequence and reset function
Programmable on-die termination (ODT) for data, data mask and differential strobe pairs
Dynamic ODT mode for improved signal integrity and preselectable termination impedances during
writes
2K Byte page size
Packaged in WBGA 96 Ball (9 x13 mm2), using lead free materials with RoHS compliant
3. ORDER INFORMATION
PART NUMBER
W632GU6KB-11
W632GU6KB-12
W632GU6KB12I
W632GU6KB-15
W632GU6KB15I
SPEED GRADE
DDR3L-1866 (13-13-13)
DDR3L-1600 (11-11-11)
DDR3L-1600 (11-11-11)
DDR3L-1333 (9-9-9)
DDR3L-1333 (9-9-9)
OPERATING TEMPERATURE
0°C TCASE 95°C
0°C TCASE 95°C
-40°C TCASE 95°C
0°C TCASE 95°C
-40°C TCASE 95°C
Publication Release Date: Jan. 20, 2015
Revision: A06
-6-

6 Page









W632GU6KB pdf, datenblatt
W632GU6KB
8. FUNCTIONAL DESCRIPTION
8.1 Basic Functionality
The DDR3L SDRAM is a high-speed dynamic random-access memory internally configured as an
eight-bank DRAM. The DDR3L SDRAM uses an 8n prefetch architecture to achieve high-speed
operation. The 8n prefetch architecture is combined with an interface designed to transfer two data
words per clock cycle at the I/O pins. A single read or write operation for the DDR3L SDRAM consists
of a single 8n-bit wide, four clock data transfer at the internal DRAM core and eight corresponding n-
bit wide, one-half clock cycle data transfers at the I/O pins.
Read and write operation to the DDR3L SDRAM are burst oriented, start at a selected location, and
continue for a burst length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation
begins with the registration of an Active command, which is then followed by a Read or Write
command. The address bits registered coincident with the Active command are used to select the
bank and row to be activated (BA0-BA2 select the bank; A0-A13 select the row). The address bits
registered coincident with the Read or Write command are used to select the starting column location
for the burst operation, determine if the auto precharge command is to be issued (via A10), and select
BC4 or BL8 mode ‘on the fly’ (via A12) if enabled in the mode register.
Prior to normal operation, the DDR3L SDRAM must be powered up and initialized in a predefined
manner. The following sections provide detailed information covering device reset and initialization,
register definition, command descriptions, and device operation.
8.2 RESET and Initialization Procedure
8.2.1 Power-up Initialization Sequence
The following sequence is required for POWER UP and Initialization.
1. Apply power (RESET# is recommended to be maintained below 0.2 * VDD; all other inputs may be
undefined). RESET# needs to be maintained for minimum 200 µS with stable power. CKE is pulled
“Low” anytime before RESET# being de-asserted (min. time 10 nS). The power voltage ramp time
between 300 mV to VDD min. must be no greater than 200 mS; and during the ramp, VDD VDDQ
and (VDD - VDDQ) < 0.3 Volts.
VDD and VDDQ are driven from a single power converter output, AND
The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to
VDDQ and VDD on one side and must be larger than or equal to VSSQ and VSS on the other side.
In addition, VTT is limited to 0.95 V max once power ramp is finished, AND
VREF tracks VDDQ/2.
OR
Apply VDD without any slope reversal before or at the same time as VDDQ.
Apply VDDQ without any slope reversal before or at the same time as VTT & VREF.
The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to
VDDQ and VDD on one side and must be larger than or equal to VSSQ and VSS on the other side.
2. After RESET# is de-asserted, wait for another 500 µS until CKE becomes active. During this time,
the DRAM will start internal state initialization; this will be done independently of external clocks.
3. Clocks (CK, CK#) need to be started and stabilized for at least 10 nS or 5 tCK (which is larger)
before CKE goes active. Since CKE is a synchronous signal, the corresponding set up time to
clock (tIS) must be met. Also, a NOP or Deselect command must be registered (with tIS set up time
to clock) before CKE goes active. Once the CKE is registered “High” after Reset, CKE needs to be
continuously registered “High” until the initialization sequence is finished, including expiration of
tDLLK and tZQinit.
- 12 -
Publication Release Date: Jan. 20, 2015
Revision: A06

12 Page





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