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CGHV31500F Schematic ( PDF Datasheet ) - Cree

Teilenummer CGHV31500F
Beschreibung GaN HEMT
Hersteller Cree
Logo Cree Logo 




Gesamt 10 Seiten
CGHV31500F Datasheet, Funktion
PRELIMINARY
CGHV31500F
500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217.
PN:
Package
TCyGpHeV: 43410520107F
Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.9 GHz
3.1 GHz
Output Power
665 705 645
Gain
13.2
13.5
13.1
Drain Efficiency
66 68 62
Note:
Measured in the CGHV31500F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 45 dBm.
Units
W
dB
%
Features
• 2.7 - 3.1 GHz Operation
• 675 W Typical Output Power
• 13.3 dB Power Gain
• 66% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
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CGHV31500F Datasheet, Funktion
CGHV31500F-AMP Application Circuit Outline
CGHV31500F-AMP Application Circuit Schematic
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6 CGHV31500F Rev 1.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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