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CGHV27100 Schematic ( PDF Datasheet ) - Cree

Teilenummer CGHV27100
Beschreibung GaN HEMT
Hersteller Cree
Logo Cree Logo 




Gesamt 11 Seiten
CGHV27100 Datasheet, Funktion
CGHV27100
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
is designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV27100 ideal for 2.5 - 2.7 GHz LTE, 4G Telecom and BWA
amplifier applications. The transistor is input matched and supplied in a ceramic/
metal pill and flange packages.
PNPa: CckGaHgVe2T7y1p0e0: F44a0n1d6C2GaHndV2474100106P1
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain @ 44 dBm
18.1
18.0
17.9
ACLR @ 44 dBm
-37.0
-37.0
-37.0
Drain Efficiency @ 44 dBm
34.0
33.5
32.0
Note:
Measured in the CGHV27100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V, IDS = 500 mA.
Units
dB
dBc
%
Features
• 2.5 - 2.7 GHz Operation
• 18.0 dB Gain
• -37 dBc ACLR at 25 W PAVE
• 33 % Efficiency at 25 W PAVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/rf
1






CGHV27100 Datasheet, Funktion
CGHV27100-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
R1, R2
C1
C2
C3
C8, C13
C4, C9, C14
C5, C10, C15
C6
C7
C11, C16
C12
C17
J1, J2
J3
Description
RES, 10 OHM, +/- 1%, 1/16 W, 0603
CAP, 5.6 pF, +/- 0.25 pF, 0603, ATC
CAP, 27 pF, +/-5%, 0603, ATC
CAP, 10.0 pF, +/-5%, 0603, ATC
CAP, 8.2 pF, +/-0.25 pF, 0603, ATC
CAP, 470 pF, 5%, 100 V, 0603, X
CAP, 33000 pF, 0805, 100 V, X7R
CAP, 10 UF, 16 V, TANTALUM
CAP, 27 pF, +/-5%, 250 V, 0805, ATC 600 F
CAP, 1.0 UF, 100 V, 10%, X7R, 1210
CAP, 100 UF, +/-20%, 160 V, ELECTROLYTIC
CAP, 33 UF, 20%, ELECTROLYTIC
CONN, SMA
HEADER RT>PLZ.1CEN LK 9POS
PCB, RO4350, 0.020” THK, CGHV27100F
2-56 SOC HD SCREW 1/4 SS
#2 SPLIT LOCKWASHER SS
CGHV27100F
CGHV27100-AMP Demonstration Amplifier Circuit
Qty
2
1
1
1
2
3
3
1
1
2
1
1
2
1
1
4
4
1
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A > 250 V
1 < 200 V
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6 CGHV27100 Rev 1.0
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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