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Teilenummer | CGHV27015S |
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Beschreibung | GaN HEMT | |
Hersteller | Cree | |
Logo | ||
Gesamt 12 Seiten CGHV27015S
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The
CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications
from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as
well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device
provide 2.5W of average power or 15W of peak power. At a Vdd of 28V, the device provides 1S
of average power and 7W of peak power. The transistor is available in a 3mm x 4mm, surface
mount,
duPaalc-fklaaPtg-Ne:TCyGpHe:V32x740D1F5NS
no-lead (DFN) package.
Typical Performance 2.4-2.7 GHz (TC = 25˚C) , 50 V
Parameter
2.4 GHz
Small Signal Gain
23
Adjacent Channel Power @ POUT = 2.5 W
Drain Efficiency @ POUT = 2.5 W
Input Return Loss
-36.7
35.9
-9.312
2.5 GHz
22
-40.7
33.5
-9.6
Note:
Measured in the CGHV27015S-AMP1 application circuit.
Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.
2.6 GHz
21.7
-42.4
30.4
-8.6
2.7 GHz
21.2
-42.5
30.2
-7.8
Units
dB
dBc
%
dB
Features for 50 V in CGHV27015S-AMP1
• 2.4 - 2.7 GHz Operation
• 15 W Typical Output Power
• 21 dB Gain at 2.5 W PAVE
• -38 dBc ACLR at 2.5 W PAVE
• 32% efficiency at 2.5 W PAVE
• High degree of APD and DPD correction can be applied
Subject to change without notice.
www.cree.com/rf
1
Source and Load Impedances for Application Circuit CGHV27015S-AMP1
Z Source
G
D
Z Load
S
Frequency (MHz)
2400
2500
2600
2700
Z Source
7.9 + j2.14
8 + j2.9
7.9 + j3.6
7.7 - j4.4
Z Load
15.8 + j43.1
18.3 + j43.7
19.7 + j43.4
19.7 + j43.4
Note1: VDD = 50 V, IDQ = 60 mA in the DFN package.
Note2: Impedances are extracted from the CGHV27015S-AMP1 application
circuit and are not source and load pull data derived from the transistor.
CGHV27015S-AMP1 Application Circuit Bill of Materials
Designator
Description
R1
R2
R3, R4
C1, C4
C2
C3
C8
C13
RES, 332,OHM, +/- 1%, Vishay
RES, 22.6,OHM, +/- 1%, 1/16W, 0603
RES, 2.2,OHM, +/- 1%, 1/16W, 0603
CAP, 27pF, +/- 5%, 0603, ATC
CAP, 2.0pF,+/-0.1pF, 0603 ATC
CAP, 0.1pF,+/-0.05 pF, 0603, ATC
CAP, 6.2pF, +/-0.1pF, 0603, ATC
CAP, 10pF +/-5%, 0603, ATC
C6, C11
CAP, 33000pF, 0805, ATC
C7, C12
C10
CAP, 470PF, 5%, 100V, 0603,
CAP, 1.0UF, 100V, 10%, X7R, 1210
C5 CAP 10UF 16V TANTALUM
C9
J1, J2
J3
CAP, 33UF, 20%, G CASE
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE,
BLUNT POST
HEADER RT>PLZ .1CEN LK 5POS
Q1 CGHV27015S, DFN
Qty
1
1
1
2
1
2
1
1
2
2
1
1
1
2
1
1
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6 CGHV27015S Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
6 Page Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.313.5639
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12 CGHV27015S Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ CGHV27015S Schematic.PDF ] |
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