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Teilenummer | CGH40180PP |
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Beschreibung | RF Power GaN HEMT | |
Hersteller | Cree | |
Logo | ||
Gesamt 13 Seiten CGH40180PP
180 W, RF Power GaN HEMT
Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40180PP ideal for linear
and compressed amplifier circuits. The transistor is available in a 4-lead
flange package.
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FEATURES
• Up to 2.5 GHz Operation
• 20 dB Small Signal Gain at 1.0 GHz
• 15 dB Small Signal Gain at 2.0 GHz
• 220 W typical PSAT
• 70 % Efficiency at PSAT
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
1
CGH40180PP Power Dissipation De-rating Curve
CGH40180PP CW Power Dissipation De-rating Curve
250
200
150
100
Note 1
50
0
0 25 50 75 100 125 150 175 200 225
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
250
CGH40180PP Transient Power Dissipation De-rating Curve
CGH40180PP Transient Power Dissipation De-Rating Curve
250
200
150
100
Note 1
50
0
0 25 50 75 100 125 150 175 200 225 250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Note 2. This transient de-rating curve assumes a 1msec pulse with a 20% duty cycle
with no power dissipated during the “off-cycle.”
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6 CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
6 Page Product Ordering Information
Order Number
Description
CGH40180PP
GaN HEMT
Unit of Measure
Each
Image
CGH40180PP-TB
Test board without GaN HEMT
Each
CGH40180PP-AMP
Test board with GaN HEMT installed
Each
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12 CGH40180PP Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
Fax: +1.919.869.2733
www.cree.com/rf
12 Page | ||
Seiten | Gesamt 13 Seiten | |
PDF Download | [ CGH40180PP Schematic.PDF ] |
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