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CGH35060F1 Schematic ( PDF Datasheet ) - Cree

Teilenummer CGH35060F1
Beschreibung GaN HEMT
Hersteller Cree
Logo Cree Logo 




Gesamt 12 Seiten
CGH35060F1 Datasheet, Funktion
CGH35060F1 / CGH35060P1
60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access
Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH35060F ideal for 3.3-3.6 GHz WiMAX and
BWA linear amplifier applications. The transistor is supplied in a ceramic/
metal flange and pill package. Cree GaN-on-SiC HEMTs are highly correctable,
enabling even greater efficiency when used with digital pre-distortion (DPD).
PPNa: cCkGaHge35T0y6p0eF: 414&01C9G3H&354046001P916
Typical Performance Over 3.3-3.6GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
Small Signal Gain
11.7
12.2
12.6
3.6 GHz
12.8
EVM @ 26 dBm
2.05
1.82
1.56
1.80
EVM @ 39 dBm
1.91
1.83
1.98
2.86
Drain Efficiency @ 39 dBm
22.0
23.1
24.9
26.7
Input Return Loss
8.0
10.3
12.5
13.1
Note:
Measured in the CGH35060F1-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Units
dB
%
%
%
dB
Features
• 3.3 - 3.6 GHz Operation
• 60 W Peak Power Capability
• 12 dB Small Signal Gain
• 8.0 W PAVE at < 2.0 % EVM
• 25 % Drain Efficiency at 8 W PAVE
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/rf
1






CGH35060F1 Datasheet, Funktion
Source and Load Impedances
Z Source
G
D
Z Load
S
Frequency (MHz)
Z Source
Z Load
3300
3400
3.5 - j12.1
3.5 - j11.4
6.5 - j6.8
6.0 - j5.9
3500
3600
3.3 - j10.7
3.2 - j10.0
5.6 - j5.1
5.4 - j4.3
Note1: VDD = 28V, IDQ = 250mA. In the 440193 package.
Note2: Impedances are extracted from the CGH35060F1-AMP demonstration
circuit and are not source and load pull data derived from the transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6 CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf

6 Page









CGH35060F1 pdf, datenblatt
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing & Export
Cree, RF Components
919.407.5302
Ryan Baker
Marketing
Cree, RF Components
919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
919.407.5639
Copyright © 2008-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12 CGH35060F1 / CGH35060P1 Rev 3.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/rf

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