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W02G Schematic ( Datenblatt PDF ) - Vishay

Teilenummer W02G
Beschreibung Glass Passivated Single-Phase Bridge Rectifier
Hersteller Vishay
Logo Vishay Logo 

Gesamt 4 Seiten
		
W02G Datasheet, Funktion
W005G, W01G, W02G, W04G, W06G, W08G, W10G
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
+~
~−
+~
~−
Case Style WOG
PRIMARY CHARACTERISTICS
Package
WOG
IF(AV)
VRRM
1.5 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
IR
VF at IF = 1.0 A
TJ max.
Diode variations
50 A
5 μA
1.0 V
150 °C
Quad
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Typical IR less than 0.1 μA
• High case dielectric strength
e4
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, adapter, charger, lighting ballaster on
consumers, and home appliances applications.
MECHANICAL DATA
Case: WOG
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL W005G W01G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at
0.375" (9.5 mm) lead length at TA = 25 °C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
VRRM
VRMS
VDC
IF(AV)
IFSM
I2t
50 100
35 70
50 100
Operating junction and storage temperature range TJ, TSTG
W02G
200
140
200
W04G
400
280
400
W06G
600
420
600
1.5
50
10
- 55 to + 150
W08G
800
560
800
W10G
1000
700
1000
UNIT
V
V
V
A
A
A2s
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous forward
voltage per diode
IF = 1.0 A
VF
Maximum DC reverse current at rated TA = 25 °C
DC blocking voltage per diode
TA = 125 °C
IR
Typical junction capacitance per diode 4.0 V, 1 MHz
CJ
VALUES
1.0
5.0
500
14
UNIT
V
μA
pF
Revision: 08-Jul-13
1 Document Number: 88769
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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