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Teilenummer | CZT5401 |
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Beschreibung | PNP Transistor | |
Hersteller | SeCoS | |
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Gesamt 2 Seiten Elektronische Bauelemente
CZT5401
PNP Transistor
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The CZT5401 is designed for general
purpose applications requiring high
breakdown voltages.
5401
MAXIMUM RATINGS* (Tamb =25oC , unless otherwise specified)
REF.
A
C
D
E
I
H
Min.
6.70
2.90
0.02
0
0.60
0.25
Max.
7.30
3.10
0.10
10
0.80
0.35
REF.
B
J
1
2
3
4
5
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Power Dissipation
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS Tamb=25oC unlessotherwise specified
Parameter
Symbol
MIN TYP MAX
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE 1
hFE 2
hFE 3
VCE(sat) 1
VCE(sat) 2
VBE(sat)1
VBE(sat)2
-160
-150
-5
_
_
50
80
50
_
_
_
_
__
__
__
_ -50
_ -50
__
160 400
__
_ -200
_ -500
_ -1
_ -1
Transition frequency
f T 100 _ 300
Collector output capacitance
Cob _ _ 6
Value
-160
-150
-5
-600
1.5
-55~-150
Units
V
V
V
mA
W
CO
UNIT
V
V
V
nA
nA
_
_
_
mV
V
MHz
pF
Test conditions
Ic=-100u A,IE=0
IC= -1mA,IB=0
IE= -10uA,IC=0
VCB= -120V,IE=0
VEB=-3V,IC=0
VCE= -5V, IC= -1mA
VCE=-5V, IC= -10mA
VCE= -5V, IC= -50mA
IC=-10mA,IB= -1mA
IC=-50mA,IB= -5mA
IC=-10mA,IB= -1mA
IC=-50mA,IB= -5mA
VCE=-10V,IC=-10mA ,
f = 100MHz
VCB=-10V, f=1MHz,IE=0
CLASSIFICATION OF hFE
Rank
A
N
Range
80-200
100-240
C
160-400
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ CZT5401 Schematic.PDF ] |
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