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PDF DMN3053L Data sheet ( Hoja de datos )

Número de pieza DMN3053L
Descripción N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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No Preview Available ! DMN3053L Hoja de datos, Descripción, Manual

Product Summary
V(BR)DSS
30V
RDS(ON)
45m@ VGS = 10V
50m@ VGS = 4.5V
ID
TA = +25°C
4.0 A
3.5A
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Load Switch
DC-DC Converters
Power management functions
SOT23
DMN3053L
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
D
ESD PROTECTED
GS
Top View
Equivalent Circuit
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMN3053L-7
DMN3053L-13
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Chengdu A/T Site
2007
U
2008
V
Month
Code
Jan Feb
12
DMN3053L
Document number: DS36883 Rev. 2 - 2
Shanghai A/T Site
3N6 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2009
W
Mar
3
2010
X
Apr
4
2011
Y
2012
Z
2013
A
May Jun
56
Jul Aug
78
2014
B
Sep
9
1 of 6
www.diodes.com
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
April 2014
© Diodes Incorporated

1 page




DMN3053L pdf
DMN3053L
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
RJA(t) = r(t) * RJA
RJA = 62°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100 1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A ll 7 °
H
K1 K
A
J
M
L
a
L1
CB
D
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
a
All Dimensions in mm
Y
Z
C
XE
Dimensions
Z
X
Y
C
E
Value (in mm)
2.9
0.8
0.9
2.0
1.35
DMN3053L
Document number: DS36883 Rev. 2 - 2
5 of 6
www.diodes.com
April 2014
© Diodes Incorporated

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