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Número de pieza | DMN3032LE | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
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No Preview Available ! DMN3032LE
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(on) max
29mΩ @ VGS = 10V
35mΩ @ VGS = 4.5V
ID
TA = +25°C
5.6A
4.8A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC Motor Control
• DC-AC Inverters
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See diagram below
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.112 grams (approximate)
SOT223
D
Top View
Pin Out - Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN3032LE-13
Qualification
Standard
Case
SOT223
Packaging
2,500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YWW
N3032L
YWW
N3032L
= Manufacturer’s Marking
N3032L = Marking Code
YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y= Year (ex: 3 = 2013)
WW = Week (01 - 53)
DMN3032LE
Document number: DS36695 Rev. 2 - 2
1 of 6
www.diodes.com
May 2014
© Diodes Incorporated
1 page DMN3032LE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.0001
0.001
RθJA(t) = r(t) * RθJA
RθJA = 99°C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
100 1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
b1 Q
C
e1 b
e
A A1
Gauge
Plane
0.25
Seating
Plane
7°
E E1
L
0°-10°
SOT223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b 0.60 0.80 0.70
b1 2.90 3.10 3.00
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e - - 4.60
e1 -
- 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
C1
Y2
X2
C2
Dimensions
X1
X2
Y1
Y2
C1
C2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
DMN3032LE
Document number: DS36695 Rev. 2 - 2
5 of 6
www.diodes.com
May 2014
© Diodes Incorporated
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMN3032LE.PDF ] |
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