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EGF1G Schematic ( PDF Datasheet ) - Taiwan Semiconductor

Teilenummer EGF1G
Beschreibung Surface Mount Glass Passivated Junction High Efficient Rectifiers
Hersteller Taiwan Semiconductor
Logo Taiwan Semiconductor Logo 




Gesamt 2 Seiten
EGF1G Datasheet, Funktion
EGF1A THRU EGF1M
1.0 AMP. Surface Mount Glass Passivated Junction High Efficient Rectifiers
Voltage Range
50 to 1000 Volts
Current
1.0 Ampere
Features
Ideal for surface mount automotive applications
Glass passivated cavity-free junction
Easy pick and place
SMA/DO-214AC
.062(1.58)
.050(1.27)
.111(2.83)
.090(2.29)
Capable of meeting enviromental standard of
MIL-S-19500
Plastic material used carries Underwriters
Laboratory Classification 94V-O
Compete device submersible temperature of 265OC
for 10 sec in solder bath.
.187(4.75)
.160(4.06)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.120 gram
.091(2.30)
.078(1.99)
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
.210(5.33)
.195(4.95)
.012(.31)
.006(.15)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol EGF EGF EGF EGF EGF EGF EGF EGF Units
1A 1B 1C 1D 1G 1J 1K 1M
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 105 140 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current @TL =125
VDC 50 100 150 200 400 600 800 1000 V
I(AV)
1.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
30
A
Maximum Instantaneous Forward Voltage
@ 1.0A
VF
1.0
1.3 1.7
V
Maximum DC Reverse Current
@TA =25at Rated DC Blocking Voltage
@ TA=125
IR
5 uA
100 uA
Maximum Reverse Recovery Time
(Note 1 )
Trr
50
75 nS
Typical Junction Capacitance ( Note 2 )
Cj
15 pF
Typical Thermal Resistance (Note 3)
Operating Temperature Range
RθJA
RθJL
TJ
85.0
30.0
-65 to +175
/W
Storage Temperature Range
TSTG
-65 to +175
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Thermal Resistance from Junction to Ambient and from Junction to Lead P.C.B. Mounted on
0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Areas.
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