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Número de pieza | DMN2075UDW | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN2075UDW (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Product Summary
V(BR)DSS
20V
RDS(on) max
48mΩ @ VGS = 4.5V
59mΩ @ VGS = 2.5V
ID
TA = 25°C
2.8A
2.6A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
DMN2075UDW
N-CHANNEL ENHANCEMENT MODE MOSFET
Benefit and Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Weight: 0.006 grams (approximate)
SOT363
D DS
Top View
D DG
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMN2075UDW-7
Case
SOT363
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Packaging
3000/Tape & Reel
G22
G22 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
DMN2075UDW
Document number: DS35542 Rev. 1 - 2
1 of 6
www.diodes.com
September 2011
© Diodes Incorporated
1 page DMN2075UDW
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
0.0001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 225°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 12 Transient Thermal Resistance
10
100 1,000
Package Outline Dimensions
A
BC
H
K
J
DF
L
M
SOT363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α 0° 8°
All Dimensions in mm
Suggested Pad Layout
C2 C2
G
Z
Y
X
C1
Dimensions
Z
G
X
Y
C1
C2
Value (in mm)
2.5
1.3
0.42
0.6
1.9
0.65
DMN2075UDW
Document number: DS35542 Rev. 1 - 2
5 of 6
www.diodes.com
September 2011
© Diodes Incorporated
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMN2075UDW.PDF ] |
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