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Número de pieza | DMN2065UW | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMN2065UW (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Product Summary
V(BR)DSS
20V
RDS(ON) max
56mΩ @ VGS = 4.5V
65mΩ @ VGS = 2.5V
93mΩ @ VGS = 1.8V
140mΩ @ VGS = 1.5V
ID max
TA = 25°C
2.8A
2.6A
2.2A
1.8A
DMN2065UW
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• General Purpose Interfacing Switch
• Power Management Functions
• DC-DC Converters
• Analog Switch
Mechanical Data
• Case: SOT323
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.027 grams (approximate)
SOT323
Drain
D
Top View
Gate
Source
Equivalent Circuit
GS
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMN2065UW-7
Case
SOT323
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
3000/Tape & Reel
Marking Information
DMH
DMH = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMN2065UW
Document number: DS35554 Rev. 1 – 2
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 6
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
October 2011
© Diodes Incorporated
1 page DMN2065UW
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.00001 0.0001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 300°C/W
Duty Cycle, D = t1/ t2
0.001
0.01 0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100 1,000
Package Outline Dimensions
A
BC
G
H
K
J
D
L
M
SOT323
Dim Min Max Typ
A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D-
- 0.65
G 1.20 1.40 1.30
H 1.80 2.20 2.15
J 0.0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.18 0.11
α 0° 8° -
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
XE
Dimensions
Z
X
Y
C
E
Value (in mm)
2.8
0.7
0.9
1.9
1.0
DMN2065UW
Document number: DS35554 Rev. 1 – 2
5 of 6
www.diodes.com
October 2011
© Diodes Incorporated
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet DMN2065UW.PDF ] |
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