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PDF DMN2011UFX Data sheet ( Hoja de datos )
| Número de pieza | DMN2011UFX | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DMN2011UFX (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Product Summary
V(BR)DSS
20V
RDS(ON) max
9.5mΩ @ VGS = 4.5V
13mΩ @ VGS = 2.5V
ID max
TA = +25°C
12.2 A
10.4 A
DMN2011UFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
• General Purpose Interfacing Switch
• Power Management Functions
Mechanical Data
• Case: V-DFN2050-4
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208 e4
• Weight: 0.01 grams (approximate)
V-DFN2050-4
G1 S1
DD
ESD PROTECTED
D1/D2
G1 G2
Gate Protection
Diode
S1
Gate Protection
Diode
S2
Top View
Bottom View
G2 S2
Top View
Pin-Out
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2011UFX-7
Case
V-DFN2050-4
Packaging
3000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
2014
B
Jan Feb
12
DMN2011UFX
Document number: DS37250 Rev. 2 - 2
2015
C
Mar
3
YM
1X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
2016
D
Apr May
45
2017
E
Jun Jul
67
1 of 7
www.diodes.com
2018
F
Aug
8
Sep
9
2019
G
Oct
O
2020
H
Nov Dec
ND
August 2014
© Diodes Incorporated
1 page  
DMN2011UFX
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1 D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
RθJA(t) = r(t) * RθJA
RθJA = 147°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
10
100 1000
DMN2011UFX
Document number: DS37250 Rev. 2 - 2
5 of 7
www.diodes.com
August 2014
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMN2011UFX.PDF ] | |
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| DMN2011UFX | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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