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Número de pieza | DIM250PHM33-TS000 | |
Descripción | Half Bridge IGBT Module | |
Fabricantes | Dynex | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DIM250PHM33-TS000 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Replaces DS6092-1
DIM250PHM33-TS000
Half Bridge IGBT Module
DS6092-2 September 2014 (LN31957)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base with AlN Substrates
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
3300V
2.2V
250A
500A
* Measured at the auxiliary terminals
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Auxiliaries
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM250PHM33-TS000 is a half bridge 3300V,
soft punch through n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) chopper
module configured with the lower arm of the bridge
controlled. The IGBT has a wide reverse bias safe
operating area (RBSOA). This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
1(E1/C2)
2(C1)
5(E1)
4(G1)
8(C1)
3(E2)
7(E2)
6(G2)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM250PHM33-TS000
Note: When ordering, please use the complete part
number
Outline type code: P
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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1 page DIM250PHM33-TS000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet DIM250PHM33-TS000.PDF ] |
Número de pieza | Descripción | Fabricantes |
DIM250PHM33-TS000 | Half Bridge IGBT Module | Dynex |
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