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Teilenummer | RFU02VSM8S |
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Beschreibung | Super Fast Recovery Diode | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 5 Seiten Super Fast Recovery Diode
RFU02VSM8S
Data Sheet
lSerise
Standard Fast Recovery
lDimensions (Unit : mm)
1.40±0.10
0.17 +0.10
-0.05
lLand size figure (Unit : mm)
1.1
lApplication
High frequency rectification
lFeatures
1) Small mold type (TUMD2SM)
2) High speed switching
0~0.10
0.80±0.05
ROHM : TUMD2SM
+0.20
0.60 -0.10
dot (year week factory) + day
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
TUMD2SM
lStructure
Cathode
Anode
lAbsolute maximum ratings (Tl= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
800 V
Reverse voltage
Average current
VR Direct voltage
Io
On glass epoxy substrate
60Hz half sin wave , Resistive load Tl=125°C
Non-repetitive forward surge current IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C
800
0.2
1
V
A
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=0.2A - 2.2 3.0 V
Reverse current
IR
VR=800V
- 0.01 10 mA
Reverse recovery time
trr IF=0.1A, IR=0.1A, Irr=0.1×IR - 20 35 ns
Reverse recovery time
trr IF=0.1A, IR=0.2A, Irr=0.1×IR - 13 25 ns
Thermal capacitance
Ct VR=0V, f=1MHz - 4 - pF
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1/4
2014.09 - Rev.A
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ RFU02VSM8S Schematic.PDF ] |
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