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RFU02VSM6S Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer RFU02VSM6S
Beschreibung Super Fast Recovery Diode
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 5 Seiten
RFU02VSM6S Datasheet, Funktion
Super Fast Recovery Diode
RFU02VSM6S
Data Sheet
lSerise
Standard Fast Recovery
lDimensions (Unit : mm)
1.40±0.10
0.17 +0.10
-0.05
lLand size figure (Unit : mm)
1.1
lApplication
High frequency rectification
lFeatures
1) Small mold type (TUMD2SM)
2) High speed switching
0~0.10
0.80±0.05
ROHM : TUMD2SM
+0.20
0.60 -0.10
dot (year week factory) + day
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
TUMD2SM
lStructure
Cathode
Anode
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
600 V
Reverse voltage
Average current
VR Direct voltage
Io
On glass epoxy substrate
60Hz half sin wave , Resistive load
Non-repetitive forward surge current IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C
600
0.2
1
V
A
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
lElectrical characteristics (Tj = 25°C)
- -55 to +150 °C
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=0.2A - 1.5 2.2 V
Reverse current
IR
VR=600V
- 0.01 10 mA
Reverse recovery time
trr IF=0.1A, IR=0.1A, Irr=0.1×IR - 24 35 ns
Reverse recovery time
trr IF=0.1A, IR=0.2A, Irr=0.1×IR - 15 25 ns
Thermal capacitance
Ct VR=0V, f=1MHz - 5 - pF
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© 2014 ROHM Co., Ltd. All rights reserved.
1/4
2014.09 - Rev.A





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