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Teilenummer | RFN6BM2DFH |
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Beschreibung | Super Fast Recovery Diode | |
Hersteller | ROHM Semiconductor | |
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Gesamt 5 Seiten Super Fast Recovery Diode
RFN6BM2DFH
Datasheet
Series
Standard Fast Recovery
Dimensions (Unit : mm)
AEC-Q101 Qualified
Land Size Figure (Unit : mm)
6.0
Application
General rectification
1
Features
1) Cathode common dual type
2) Low switching loss
3) High current overload capacity
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
Construction
Silicon epitaxial planar type
Taping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
1.6 1.6
TO-252 2.3 2.3
Structure
Cathode
φ1.55±0.1
1. 5 5 00.1
Anode Anode
0.4±0.1
TL
6.8±0.1
8.0±0.1
φ3.30.00±.10.1
2.7±0.2
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
200 V
Reverse voltage
Average rectified foward current
Forward current surge peak
Operating junction temperature
VR
Io
IFSM
Tj
Direct voltage
60Hz half sin wave , Resistive load,
1/2Io per diode
Tc=106°C
60Hz half sin wave,
Non-repetitive at Tj=25°C, per diode
-
200
6
40
150
V
A
A
°C
Storage temperature
Tstg
- 55 to 150 °C
Electrical Characteristics (Tj = 25°C, per diode)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
VF
IR
trr
Rth(j-c)
IF=3A
VR=200V
IF=0.5A, IR=1A, Irr=0.25×IR
Junction to case
- 0.90 0.98 V
- 0.05 10 A
- 12 25 ns
- - 6.0 °C / W
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© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.01 - Rev.A
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ RFN6BM2DFH Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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