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Teilenummer | RFN3BM2S |
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Beschreibung | Super Fast Recovery Diode | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 5 Seiten Super Fast Recovery Diode
RFN3BM2S
Data Sheet
lSerise
Standard Fast Recovery
lDimensions (Unit : mm)
lLand Size Figure (Unit : mm)
6.0
lApplication
General rectification
1
lFeatures
1) Low switching loss
2) High current overload capacity
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
1.6 1.6
TO-252 2.3 2.3
lStructure
Cathode
φ 1.55±0.1
f 1. 5 5 00.1
Open Anode
0.4±0.1
TL
6.8±0.1
8.0±0.1
fφ3.30.00±.10.1
2.7±0.2
lAbsolute Maximum Ratings (Ta= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
200 V
Reverse voltage
VR Direct voltage
200 V
Average rectified foward current Io 60Hz half sin wave , Resistive load
3A
Forward current surge peak
IFSM 60Hz half sin wave ,Non-repetitive at Tj=25°C
40
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
VF
IR
trr
Rth(j-c)
IF=3A
VR=200V
IF=0.5A, IR=1A, Irr=0.25×IR
Junction to case
- 0.9 0.98 V
- 0.05 10 mA
- 12 25 ns
- - 6.0 °C / W
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© 2014 ROHM Co., Ltd. All rights reserved.
1/4
2014.07 - Rev.A
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ RFN3BM2S Schematic.PDF ] |
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