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Teilenummer | RFN10BM3S |
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Beschreibung | Super Fast Recovery Diode | |
Hersteller | ROHM Semiconductor | |
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Gesamt 5 Seiten Super Fast Recovery Diode
RFN10BM3S
Datasheet
Serise
Standard Fast Recovery
Dimensions (Unit : mm)
Land Size Figure (Unit : mm)
6.0
Application
General rectification
1
1.6 1.6
Features
1) Low switching loss
2) High current overload capacity
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
Construction
Silicon epitaxial planar type
Taping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
TO-252 2.3 2.3
Structure
Cathode
φ1.55±0.1
1. 5 5 00.1
Anode Anode
0.4±0.1
TL
6.8±0.1
8.0±0.1
φ3.30.00±.10.1
2.7±0.2
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
350 V
Reverse voltage
VR Direct voltage
350 V
Average rectified foward current
Forward current surge peak
Io
IFSM
60Hz half sin wave , Resistive load Tc=34°C
60Hz half sin wave ,Non-repetitive at Tj=25°C()
10
80
A
A
Operating junction temperature
Tj
-
150 °C
Storage temperature
Tstg
Electrical Characteristics (Tj = 25°C)
Parameter
Symbol
-
Conditions
55 to 150 °C
()1-3pin commom circuit
Min. Typ. Max. Unit
Forward voltage
VF IF=10A - 1.25 1.5 V
Reverse current
IR
VR=350V
- 0.05 10 A
Reverse recovery time
trr IF=0.5A, IR=1A, Irr=0.25×IR - 22 30 ns
Thermal resistance
Rth(j-c)
Junction to case
- - 6.0 °C / W
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© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.01 - Rev.B
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ RFN10BM3S Schematic.PDF ] |
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