Datenblatt-pdf.com


RFDA2025 Schematic ( PDF Datasheet ) - RF Micro Devices

Teilenummer RFDA2025
Beschreibung DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER
Hersteller RF Micro Devices
Logo RF Micro Devices Logo 




Gesamt 11 Seiten
RFDA2025 Datasheet, Funktion
RFDA2025Dig-
ital Controlled
Variable Gain
Amplifier
RFDA2025
DIGITAL CONTROLLED VARIABLE GAIN
AMPLIFIER
Package: MCM, 32-Pin, 5.2mmx5.2mm
Features
500MHz to 2500MHz Operation
6-Bit Digital Step Attenuator
Serial Control Interface
31.5dB Attenuation Range
(0.5dB Step)
High OIP3/P1dB=+43/25dBm
Gain=-20dB to +11.5dB at
2017 MHz
Single +5V Supply
Robust 1000V HBM ESD
Footprint Compatible with 32-Pin
5mmx5mm QFN
Applications
Cellular, PCS, 3G Infrastructure
WiBro, WiMax, LTE
High Linearity Power Control
AMPIN 1
32
GND 2
GND 3
ATTOUT 4
NC 5
NC 6
NC 7
NC 8
9
31 30 29
DSA
10 11 12
28 27 26
6-bit SPI
13 14 15
25
24
NC
23 NC
22 NC
21 NC
20 NC
19 NC
18 NC
17 Vdd
16
E-pad
GND
Functional Block Diagram
Product Description
RFMD’s RFDA2025 is a digital controlled variable gain amplifier featuring
high linearity over the entire gain control range. The 6-bit digital step
attenuator is programmed with a serial mode control interface. The
RFDA2025 is packaged in a small 5.2mmx5.2mm leadless laminate
MCM with plated through thermal vias for ultra low thermal resistance.
The footprint for this module is directly compatible with most 32-pin
5mmx5mm QFNs. The output amplifier is externally matched, allowing for
optimum performance over specific bands within 500MHz to 2500MHz.
DS101117
Ordering Information
RFDA2025SQ
RFDA2025SR
RFDA2025TR7
RFDA2025TR13
RFDA2025PCK-410
Sample bag with 25 pieces
7” Reel with 100 pieces
7” Reel with 750 pieces
13” Reel with 2500 pieces
1800 MHz to 2200 MHz PCBA with 5-piece sample bag
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
GaAs pHEMT
Si CMOS
GaN HEMT
RF MEMS
InGaP HBT
SiGe HBT
Si BJT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 11






RFDA2025 Datasheet, Funktion
RFDA2025
Typical Performance - 1.8GHz to 2.2GHz Application Circuit Performance
Noise Figureover Temperature, Max Gain
DCIV over Temperature, Max Gain
Noise
Figure
(dB)
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
1.8
1.9 2.0 2.1
Frequency (GHz)
+25C
+85C
2.2
150
140
130
120
ICC (mA) 110
100
90
+25C
80 -40C
+85C
70
4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5
VCC (V)
Truth Table
DSA Control Bits
D5 D4 D3 D2 D1 D0
16 dB
8 dB
4 dB
2 dB
1dB 0.5dB
111111
111110
111101
111011
110111
101111
011111
000000
Relative Gain Setting
Max Gain
-0.5 dB
-1 dB
-2 dB
-4 dB
-8 dB
-16 dB
-31.5 dB
6 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS101117

6 Page







SeitenGesamt 11 Seiten
PDF Download[ RFDA2025 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
RFDA2025DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIERRF Micro Devices
RF Micro Devices
RFDA2026DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIERRF Micro Devices
RF Micro Devices

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche