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PDF DMN1033UCB4 Data sheet ( Hoja de datos )
| Número de pieza | DMN1033UCB4 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMN1033UCB4
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
VSSS
12V
RSS(ON)
26mΩ @ VGS = 4.5V
IS
TA = +25°C
5.5 A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RSS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power
management applications.
Applications
Battery Management
Load Switch
Battery Protection
Features and Benefits
Built-in G-S protection diode against ESD 2kV HBM.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-WLB1818-4
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.005 grams (approximate)
G1 G2
ESD PROTECTED TO 2kV
Top View
S1
Equivalent Circuit
S2
Ordering Information (Note 4)
Notes:
Part Number
DMN1033UCB4-7
Case
U-WLB1818-4
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
Month
Code
GW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2009
W
Jan Feb
12
2010
X
Mar
3
2011
Y
Apr May
45
2012
Z
Jun Jul
67
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov Dec
ND
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
1 of 6
www.diodes.com
September 2013
© Diodes Incorporated
1 page  
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.0001
0.001
DMN1033UCB4
RJA(t) = r(t) * RJA
RJA = 156°C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
100 1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
PIN ID
D
12
e
AB
Ee
BA
6 x- Ø b
A2
A
12
S E A TIN G
PLA N E
U-WLB1818-4
Dim Min Max Typ
A 0.62
A2
0.36
b 0.25 0.35 0.30
D 1.75 1.80 1.79
E 1.75 1.80 1.79
e 0.65
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
D 4x
A
B
1C2
C
Dimensions
C
D
Value
(in mm)
0.65
0.30
DMN1033UCB4
Document number: DS36264 Rev. 2 - 2
5 of 6
www.diodes.com
September 2013
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DMN1033UCB4.PDF ] | |
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