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PDF DMN1032UCB4 Data sheet ( Hoja de datos )
| Número de pieza | DMN1032UCB4 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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Product Summary
VDSS
12V
RDS(on)
18mΩ
Qg
3.2nC
Qgd
0.3nC
ID
4.8A
Typ. @ VGS = 4.5V, TA = +25°C
Description
This 2nd generation Lateral MOSFET (LD-MOS) is engineered to
minimize on-state losses and switch ultra-fast, making it ideal for high
efficiency power transfer. It uses Chip-Scale Package (CSP) to
increase power density by combining low thermal impedance with
minimal RDS(on) per footprint area.
Applications
DC-DC Converters
Battery Management
Load Switch
U-WLB1010-4
DMN1032UCB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
LD-MOS technology with the lowest Figure of Merit:
RDS(on) = 18mΩ to minimize on-state losses
Qg = 3.2nC for ultra-fast switching
Vgs(th) = 0.8V typ. for a low turn-on potential
CSP with Footprint 1.0mm × 1.0mm
Height = 0.62mm for Low Profile
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-WLB1010-4
Terminal Connections: See Diagram Below
Top View
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN1032UCB4-7
Case
U-WLB1010-4
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
U-WLB1010-4
MW = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
2014
B
2015
C
Month
Code
Jan Feb
12
DMN1032UCB4-7
Document number: DS36643 Rev. 6 - 2
2016
D
Mar
3
2017
E
Apr
4
2018
F
2019
G
2020
H
May
5
Jun
6
1 of 6
www.diodes.com
Jul
7
2021
I
Aug
8
2022
J
Sep
9
2023
K
Oct
O
2024
L
2025
M
Nov Dec
ND
January 2015
© Diodes Incorporated
1 page  
DMN1032UCB4
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
0.00001 0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
RJA(t) = r(t) * RJA
RJA = 145°C/W
Duty Cycle, D = t1/ t2
10 100 1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
4X-Ø b
E
D A3
A2
A
SD
e
SE
e
U-WLB1010-4
Dim Min Max Typ
D 0.95 1.05 1.00
E 0.95 1.05 1.00
A
0.62
A2
0.38
A3 0.015 0.025 0.025
b 0.25 0.35 0.30
e 0.50
SD
0.25
SE
0.25
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
U-WLB1010-4
ØD
Dimensions Value (in mm)
C C 0.50
D 0.25
C
DMN1032UCB4-7
Document number: DS36643 Rev. 6 - 2
5 of 6
www.diodes.com
January 2015
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DMN1032UCB4.PDF ] | |
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