RJF0619JPD Datasheet PDF - Renesas
| Part Number | RJF0619JPD | |
| Description | Silicon N Channel Thermal FET | |
| Manufacturers | Renesas | |
| Logo |  |
|
|
There is a preview and RJF0619JPD download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
Preview 1 page No Preview Available !
Target Specifications Datasheet
RJF0619JPD
60V, 30A Silicon N Channel Thermal FET
Power Switching
R07DS1108EJ0100
Rev.1.00
Sep. 02, 2013
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation (4 V Gate drive).
• Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built-in the current limitation circuit.
• Power supply voltage applies 12 V and 24 V.
• AEC-Q101 Compliant
• Endurance capability against to ESD.
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
1
2
3
G
Gate Resistor
Temperature
Sensing
Circuit
Latch
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
D
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
VGSS
ID Note3
IDR
IAP Note 2
EAR Note 2
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25°C
2. Tch = 25°C, Rg ≥ 50 Ω
3. It provides by the current limitation lower bound value.
Ratings
60
16
–2.5
30
30
6.7
192
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
°C
°C
R07DS1108EJ0100 Rev.1.00
Sep. 02, 2013
Page 1 of 7
|
| |
 
RJF0619JPD
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
16
14
12
10
8
6
24 V
VDD = 16 V
4
2
0
10
100
1000
10000
Shutdown Time of Load-Short Test Pw (μS)
Target Specifications
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120 ID = 0.5 A
100
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3 0.2
0.1
0.1
0.05
θch - c(t) = γs (t) • θch - c
θch - c = 3.125°C/W, Tc = 25°C
0.02
0.03
0.01
1shot
pulse
PDM
PW
T
D=
PW
T
0.01
10 μ
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
R07DS1108EJ0100 Rev.1.00
Sep. 02, 2013
Page 5 of 7
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RJF0619JPD electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ RJF0619JPD.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| RJF0619JPD | The function is Silicon N Channel Thermal FET. Renesas | |
| RJF0619JPE | The function is Silicon N Channel Thermal FET. Renesas | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
RJF0
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||