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PDF RJF0610DSP Data sheet ( Hoja de datos )
| Número de pieza | RJF0610DSP | |
| Descripción | Silicon N Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Target Specifications Datasheet
RJF0610DSP
Silicon N Channel MOS FET Series
Power Switching
R07DS0560EJ0200
Rev.2.00
Apr 16, 2012
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation (5 to 6 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Temperature hysteresis type.
High density mounting
Power supply voltage applies 12 V and 24 V.
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8765
1, 3
2, 4
1234
5, 6, 7, 8
2
G
Source
Gate
Drain
Gate Resistor
Current
Limitation
Circuit
Temperature Self Gate
Sensing
Return Shut-down
Circuit
Circuit Circuit
MOS1
DD
78
4 Current
G
Gate Resistor
Limitation
Circuit
Temperature Self Gate
Sensing
Return Shut-down
Circuit
Circuit Circuit
1
S MOS2
DD
56
3
S
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
16
Gate to source voltage
Drain current
VGSS
ID Note4
–2.5
1.5
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
IDR
IAP Note 3
EAR Note 3
Pch Note 1
Pch Note 2
1.5
0.95
77.4
2
3
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
2. 2 Drive operation: When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
3. Tch = 25C, Rg 50 , L = 100 mH
4. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
C
C
R07DS0560EJ0200 Rev.2.00
Apr 16, 2012
Page 1 of 7
1 page  
RJF0610DSP
Target Specifications
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
ID = 0.2 A
100
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
1shot pulse
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PDM
D=
PW
T
PW
T
0.0001
10 μ 100 μ
1m
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
1shot pulse
0.0001
10 μ 100 μ
1m
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PDM
D=
PW
T
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
R07DS0560EJ0200 Rev.2.00
Apr 16, 2012
Page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RJF0610DSP.PDF ] | |
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